feb.1999 p eup bup bun eun bvp evp bvn evn bwp ewp bwn ewn n uvw (30.5) 715 7 15 7 (23.5) 11 25.5 25.5 2 76 93 105 18 28 45 f 5.5 tab#110, t=0.5(fig. 1) tab#250, t=0.8(fig. 2) (22.45) 7 13 4 8.0 6.35 f 1.65 2.8 f 1.2 8.6 5.5 1.5 1.5 9.5 3.4 label fig. 1 fig. 2 mitsubishi transistor modules QM20TD-HB medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM20TD-HB ? i c collector current .......................... 20a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 250 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 note: all transistor units are darlingtons.
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m5 typical value ratings 600 600 600 7 20 20 83 1 200 C40~+150 C40~+125 2500 1.47~1.96 15~20 90 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm g mitsubishi transistor modules QM20TD-HB medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 250 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =20a, i b =80ma Ci c =20a (diode forward voltage) i c =20a, v ce =2v v cc =300v, i c =20a, i b1 =120ma, i b2 =C400ma transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 1.0 1.0 40 2.0 2.5 1.5 1.5 12 2.0 1.5 2.5 0.35
feb.1999 ? 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 2 34 57 2 10 v be(sat) v ce(sat) t j =25? t j =125? i b =80ma 50 40 30 20 10 0 012345 t j =25? i b =20ma i b =40ma i b =80ma i b =200ma i b =400ma 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v ce =2.0v v ce =5.0v t j =25? t j =125? 0 10 ? 10 7 5 4 3 2 0 1 2 3 4 5 7 5 4 3 ? 10 2 t j =25? t j =125? i c =15a i c =20a i c =25a 1 10 7 5 4 3 2 0 10 7 5 4 3 0 10 23457 1 10 23457 2 10 3 2 t j =25? t j =125? i b1 =120ma v cc =300v t s t on t f i b2 =?00ma performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM20TD-HB medium power switching use insulated type
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 1 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 0 10 7 5 4 3 3457 0 10 23 2 ? 10 2 3 45 7 1 10 t s t j =25? t j =125? i b1 =120ma v cc =300v i c =20a t f 50 0 0 800 600 200 30 40 20 10 400 700 500 100 300 t j =125? i b2 =?.5a i b2 =?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 200? 5ms dc 100? 50? 10ms 1ms t c =25? 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 4 4 4 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM20TD-HB medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 1 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 40 80 120 160 200 60 100 140 180 20 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 2 10 1 10 0 10 i rr q rr t rr t j =25? t j =125? v cc =300v i b1 =120ma i b2 =?00ma 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 0.8 0.4 1.2 1.6 2.4 2.8 3.2 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM20TD-HB medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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